| PART |
Description |
Maker |
| MH25632BJ-10 |
Access time: 100 ns, 265K x 4 bit dynamic RAM
|
Mitsubishi Electric Corporation
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585
Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
|
White Electronic Designs
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| 5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).
512K x 18 SRAM. 15ns access time. Lead finish hot gold.
512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped.
512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow.
512K x 18 SRAM. 15ns access time. Lead finish factory option.
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| AS7C1026A-10JC AS7C1026A-15JI AS7C31026A-10TI AS7C |
5V 64K x 16 CM0S SRAM , 12ns access time
5V/3.3V 64K X 16 CMOS SRAM
5V 64K x 16 CM0S SRAM , 10ns access time
3.3V 64K x 16 CM0S SRAM , 12ns access time
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
|
| 5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|
| M41T00SM6E M41T00SM6F M41T00S08 |
Serial access real-time clock
|
STMicroelectronics
|
| M41T81S M41T81SM6E M41T81SM6ET M41T81SM6F M41T81SM |
Serial Access Real-Time Clock with Alarms
|
STMICROELECTRONICS[STMicroelectronics]
|
| M41T66Q6F |
Serial access real-time clock with alarms
|
STMicroelectronics
|
