| PART |
Description |
Maker |
| 2SJ656 |
High Output MOSFETs
General-Purpose Switching Device
|
SANYO[Sanyo Semicon Device]
|
| 2SK3708 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SK3101 2SK3101LS |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| MCH3339 |
Medium Output MOSFETs
|
SANYO
|
| MCH3314 |
Medium Output MOSFETs
|
SANYO
|
| 2SK3335 |
Medium Output MOSFETs
|
SANYO
|
| 2SJ632 |
Medium Output MOSFETs
|
SANYO
|
