| PART |
Description |
Maker |
| IHW40N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW30N90R08 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| IHW15N120E1 |
Reverse conducting IGBT with monolithic body Diode for soft-switching
|
Infineon Technologies A...
|
| IKW40N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IXRA15N120 |
IGBT with Reverse Blocking capability
|
IXYS
|
| U2102BNBSP U2102B |
IGBT/FET control timer for advanced dimmer, motion sensor, reverse phase control applications
From old datasheet system
|
Atmel Corp
|
| TISP5190H3BJ TISP5110H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solut...
|
