| PART |
Description |
Maker |
| AEC-6913-A1M-1010 AEC-6913-A2M-1010 |
Design for Industrial Automation, Reliable Design: RS-422/485 10x. DIO
|
AAEON Technology
|
| TISP4395H3 TISP4395H3BJ TISP4240H3 TISP4240H3BJ TI |
TISP4xxxH3BJ Overvoltage Protector Series
Overvoltage Protector Series BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| PV7F2Y0NSG-201 PV7F2T0NSG-201 PV7F2Y0NSG-203 PV7F2 |
Vandal and Water Resistant, TEMPERATURE: -20°C to 70°C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20掳C to 70掳C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20隆?C to 70隆?C, CONTACT RESISTANCE: 50mOHM Max.
|
http://
E-SWITCH
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MN-TM93-03XA5 MN-TM93-04XA5 MN-TM94-02XC5 MN-TM96- |
PVC, UL 300 V, cold resistant (- 40掳C)
PVC, UL 300 V, cold resistant (- 40°C)
|
SHIELD s.r.l.
http://
|
| BZW045V8 BZW045V8B BZW04-10 BZW04-102 BZW04-102B B |
Low Power OFF-Line SMPS Primary Switcher
TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极单向))
TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极双向))
()
TRANSILTM
|
意法半导
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FS |
From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
