| PART |
Description |
Maker |
| ESD9X12ST5G ESD9X5.0ST5G ESD9X3.3ST5G |
ESD PROTECTION DIODES IN ULTRA SMALL SOD-923 PACKAGE
|
ONSEMI[ON Semiconductor]
|
| UESD5.0DT5G UESD6.0DT5G UESD3.3DT5G |
ESD Protection Diodes - In Ultra Small SOT−723 Package
|
ONSEMI[ON Semiconductor]
|
| NTZD3155CT1G NTZD3155C NTZD3155CT2G NTZD3155CT5G |
Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package.
|
ON Semiconductor
|
| ESD9X3.3ST5G |
ESD Protection Diodes In Ultra Small SOD-923 Package 102 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| EMIF10-COM01 |
EMI滤波器包括静电放电保
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-MSOP
EMI FILTER INCLUDING ESD PROTECTION
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics
ST Microelectronics
|
| 2N7002K |
N-Ch Small Signal MOSFET with ESD Protection
|
SeCoS Halbleitertechnologie GmbH
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S12FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
