| PART |
Description |
Maker |
| ESD33ST5G ESD3.3ST5G ESD5.0ST5G ESD12ST5G |
ESD Protection Diodes In Ultra Small SOD-723 Package
|
ON Semiconductor
|
| UESD5.0DT5G UESD6.0DT5G UESD3.3DT5G |
ESD Protection Diodes - In Ultra Small SOT−723 Package
|
ONSEMI[ON Semiconductor]
|
| EMIF10-COM01 |
EMI滤波器包括静电放电保
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-MSOP
EMI FILTER INCLUDING ESD PROTECTION
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics
ST Microelectronics
|
| EMIF06-10006F1 EMIF06-10006 |
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
6 LINES EMI FILTER AND ESD PROTECTION
6 LINES EMI FILTER AND ESD PROTECTION
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| ESD11A5.0DT5G ESD11A3.3DT5G |
5V mid capacitance TVS in SOT-1123 UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
Transient Voltage Suppressors ESD Protection Diodes in Ultra Small SOT−1123 Package
|
ON Semiconductor
|
| DF3A8.2LFU07 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF5A3.6CFU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.21 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.8LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S16FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTJD4401N08 NTJD4401NT2G |
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
|
ON Semiconductor
|
