PART |
Description |
Maker |
DS1115 |
Platon Glass Variable Area Flowmeters
|
TT Electronics.
|
GSG006 GSG007 |
CAPACITOR, VARIABLE, GLASS, 500 V, 1.2 pF - 10 pF, PANEL MOUNT CAPACITOR, VARIABLE, GLASS, 500 V, 1.2 pF - 16 pF, PANEL MOUNT
|
Sprague-Goodman Electronics, Inc.
|
S997911 |
CCD area image sensor TDI operation / large active area CCD
|
Hamamatsu Corporation
|
MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX 17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
836BN-0093Z 836BN-0085Z 836BN-0110Z 836BN-0078Z 83 |
Variable Coils for Surface Mounting UNSHIELDED, VARIABLE INDUCTOR, SMD
|
TOKO, Inc. TOKO INC
|
L7BRS-1765Z |
Variable Coils UNSHIELDED, 100 uH - VARIABLE INDUCTOR
|
TOKO, Inc.
|
F292CNS-T1063Z 292CNS-T1040Z 292CNS-T1041Z 292CNS- |
Variable Coils UNSHIELDED, VARIABLE INDUCTOR
|
TOKO, Inc. TOKO[TOKO, Inc] TOKO Inc.
|
558-7106 558-7106-16-00-00 558-7106-11-00-00 |
Variable Coil, Shielded, Vertical, .09μH thru 12.0mΗ SHIELDED, 8 uH - 12 uH, VARIABLE INDUCTOR SHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components WEARNES CAMBION LTD
|
165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
L1939 L1939-04 |
300 μm emission spot, no electrode in emission area 300 m emission spot, no electrode in emission area 300 m emission spot/ no electrode in emission area 300 レm emission spot, no electrode in emission area 300レ米发射现场,没有发射电极面
|
HAMAMATSU[Hamamatsu Corporation] Hamamatsu Photonics K.K.
|
332PN-T1017Z 332PN-T1020Z 332PN-T1015Z |
COIL VARIABLE 2.7UH TYPE 5PH UNSHIELDED, VARIABLE INDUCTOR COIL VARIABLE 4.7UH TYPE 5PH UNSHIELDED, VARIABLE INDUCTOR COIL VARIABLE 1.8UH TYPE 5PH
|
TOKO, Inc. TOKO INC
|
|