| PART |
Description |
Maker |
| XTSC0402-33NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| HTSC0402-10NF-11V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| IDT71B74S10TP IDT71B74S10Y IDT71B74S12TP IDT71B74S |
M C SWITCH EXTREME 10/100SM 24-VDC SC
M C SWITCH EXTREME 10/100MM 48-VDC ST
M C SWITCH EXTREME 10/100MM 24-VDC ST
M C SWITCH EXTREME 10/100MM 95-260-VAC ST
MC SWITCH STANDARD 10/100MM 115-VAC SC
MC SWITCH EXTREME 10/100 SM ST 12-VDC
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| JANTXV1N827ATR-2 JANS1N827ATR-2 JANTXV1N827TR-2 JA |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
|
Microsemi, Corp.
Microsemi Corporation
|
| DN |
NTC Thermistors, Applications Include: Temperature Measurement, Temperature Control, Inrush Current Limiting, Temperature Compensation, Sensing Liquid Level or Air Flow
|
Vishay
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| KTY82120 KTY82121 KTY82122 KTY82110 KTY82210 KTY82 |
Silicon temperature sensors
|
NXP Semiconductors
|
| KTY83_110 KTY83_120 KTY83_151 KT83A KT83C KT83D KT |
Silicon temperature sensors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
