| PART |
Description |
Maker |
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| BGA416-08 |
RF Cascode Amplifier
|
Infineon Technologies A...
|
| 2SK2906-01 |
N-channel MOS-FET
N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI[Fuji Electric]
Fuji Electric Holdings Co., Ltd.
|
| 6BS8 4BS8 |
TWIN TRIODE FOR VKF CASCODE AMPLIFIER APPLICATIONS
|
GEC[General Electric Company]
|
| MBC13917 |
General Purpose SiGe C RF Cascode Low Noise Amplifier
|
Freescale Semiconductor, Inc
|
| STL5NK65Z L5NK65Z |
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1.5ohm - 4.2A的PowerFLAT⑩齐保护SuperMESH⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MRF9820T1 |
SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE
|
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| MBC13916 |
The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier
From old datasheet system
|
Motorola
|
| FDA15N65 |
N-Channel UniFETTM MOSFET 650V, 16A, 440m
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| STH18NB40FI |
N-Channel 400V-0.19Ω-18.4A- TO-247/ISOWATT218 PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.19Ω- 18.4A - TO-247/ISOWATT218 PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
STMicroelectronics N.V.
|
|
