| PART |
Description |
Maker |
| TGA2216-SM TGA2216-SM-15 |
0.1 3.0GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| STK401-010 STK400-010 STK401-210 STK400-100 STK400 |
3ch AF Power Amplifier(Split Power Supply) 10W 10W 10W,THD=0.4% 3通道自动对焦功率放大器（斯普利特电源0W0W的功0W，总谐波失真\u003d 0.4
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
ETC
SANYO[Sanyo Semicon Device]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QPA1013D |
6 ?18GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TDA7297SA |
10W 10W DUAL BRIDGE AMPLIFIER
|
STMicroelectronics
|
| 5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238
10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239
10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240
10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241
10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242
10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243
10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
| SZA2044ZPCK-EVB2 SZA2044ZSQ |
700MHz to 2.7GHz 5V 1W Power Amplifier
|
RF Micro Devices
|
| LTC6085HGNTR LTC6084HDDPBF |
Quad 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
Dual 1.5MHz, Rail-to-Rail, CMOS Ampli?ers
|
Linear Technology
|
| EIA1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
