| PART |
Description |
Maker |
| IRFSL5615PBF IRFS5615PBF IRFS5615PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| SI7136DP-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI4416DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4362BDY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
Vishay Siliconix
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI3865BDVRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4378DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7401DN-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| UPD70F3726 |
Parameters for 32-Bit V850ES/KX2 Devices
|
NEC Electronics Inc.
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
