PART |
Description |
Maker |
PHA-1H-D PHA-1H-DF PHA-1H-DG PHA-1H-DP |
Monolithic Amplifier Die
|
Mini-Circuits
|
PHA-1-D PHA-1-DF PHA-1-DG PHA-1-DP |
Monolithic Amplifier Die
|
Mini-Circuits
|
408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER (MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement) 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices SPANSION[SPANSION]
|
BIC702C |
Bias Controlled Monolithic IC UHF RF Amplifier Bias Controlled Monolithic IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
UPC1652G |
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER MICROWAVE/MILLIMETER WAVE AMPLIFIER,BIPOLAR,SOP,8PIN,PLASTIC From old datasheet system
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NEC Corp. NEC Electron Devices
|
Q62702-G44 CGY120 CGY120E6763 |
From old datasheet system GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) MMIC-Amplifier for GSM/PCN
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|