PART |
Description |
Maker |
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
AT25F512Y4-10YU-2.7 AT25F512N-10SU-2.7 AT25F51204 |
SPI Serial Memory 64K X 8 FLASH 2.7V PROM, PDSO8 SPI Serial Memory 64K X 8 FLASH 2.7V PROM, DSO8 Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation Atmel, Corp.
|
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
AT45DCB008 AT45DCB002 AT45DCB004 |
8-megabyte 4-megabyte, and 2-megabyte 2.7-volt Only DataFlash Cards 32M X 1 FLASH 2.7V PROM CARD, XMA7 8M byte, 4MB byte, 2M byte, 2.7-Volt Only, Serial Interface DataFlash Cards From old datasheet system 8M byte, 4M byte, 2M byte, 2.7-Volt Only, Serial Interface DataFlash Cards
|
Atmel, Corp. Atmel Corp.
|
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MSM511664C-60TS-K MSM511664C-70JS MSM511664C-80JS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
A29DL324TG-90 A29DL324TV-90 A29DL324UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http:// AMIC Technology Corporation
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
LC87F83C8AU LC87F8396AU LC87F8364AU |
FROM 128K byte, RAM 6K byte on-chip 8-bit ETR Microcontroller
|
Sanyo Semicon Device
|