| PART |
Description |
Maker |
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| IXYH40N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXYJ20N120C3D1 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXXH30N60B3 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXXH75N60B3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXXH75N60C3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXYH12N250C |
High Voltage XPTTM IGBT
|
IXYS Corporation
|
| IXYB82N120C3H1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| FQU2N90 FQD2N90 FQD2N90TF FQD2N90TM FQU2N90TU |
900V N-Channel QFET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FQA8N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
TERMINAL 8 A, 900 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
