| PART |
Description |
Maker |
| RCLAMP3624T |
ESD Protection for uUSB Interfaces Flow-Through design for easy layout
|
Semtech Corporation
|
| 16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C X-FLOW, .4H LOW FLOW, THREADED
HTSNK C X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| 03-09-1011 03-09-1027 03-09-1041 03-09-1054 03-09- |
Panel Mount Plug and Receptacle, with Extraction Tool and Universal Crimp Tool
|
MolexKits
|
| VBUS54FD-SD1 |
4-Line BUS-Port ESD Protection Array - Flow Through Design
|
Vishay Siliconix
|
| 17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| 24C04 ST25C04 ST25C04B1TR ST25C04B3TR ST25C04B5TR |
KIT, NIOS FOR CYCLONE II; Kit contents:Nios II Development Board, Nios II IDE, Quartus II Web Edition design software, SOPC Builder system integration tool, Cables and accessories, Design examples and applications RoHS Compliant: Yes
IC MAX 7000 CPLD 256 208-PQFP
PowerPak; Charge, gate n-channel:27nC; Current, Idm pulse:40A; Depth, external:5.26mm; RoHS Compliant: Yes
MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:80V; Case style:PowerPak SO-8; Current, Id cont:7.6A
(ST2xxx) 4 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
From old datasheet system
4 Kbit Serial I 2 C Bus EEPROM with User-Defined Block Write Protection
4KbitSerialI2CBusEEPROMwithUser-DefinedBlockWriteProtection
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AN202-1 AN202 |
Technical Consideration for Migrating CS5460-Based Design to CS5460A-Based Design
From old datasheet system
|
Cirrus Logic
|
| IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 |
From old datasheet system
32K x 32 3.3V Synchronous SRAM Flow-Through Outputs
32K X 32 Flow-Through Ouputs SRAM
|
Integrated Device Technology
IDT
|
| 18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE
HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
|
VICOR[Vicor Corporation]
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
