| PART |
Description |
Maker |
| 2SD799 |
SILICON NPN TRIPLE DIFFUSED TYPE(DARINGTON PPOWER)
|
Toshiba Corporation
|
| AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH
TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551
DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??)
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
| MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose
COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
(MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| BD438 ON0195 BD442 BD440 |
RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN
POWER TRANSISTORS PNP SILICON
From old datasheet system
4.0 AMPERES POWER TRANSISTORS
Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount
Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR
Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http://
ONSEMI[ON Semiconductor]
|
| NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
SILICON POWER MOS FET
|
California Eastern Labs
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
