| PART |
Description |
Maker |
| 107-1506-18 107-1506-24 SD107-1506 |
DIN REMOVAL TOOL
|
Winchester Electronics Corporation
|
| ST7GEME4U1 ST7GEME4M1 ST7GEME4 |
Full-speed USB MCU with smartcard firmware and EMV/non-EMV interface
|
STMicroelectronics
|
| ST7GEME4 ST7GEME4U1 |
Full-speed USB MCU with smartcard firmware and EMV/non-EMV interface
|
意法半导
|
| AD8004 AD8004AN AD8004AR-14 AD8004AR-14-REEL AD800 |
Quad 3000 V/s 35mW Current Feedback Amplifier
Quad 3000 V/us, 35 mW Current Feedback Amplifier
REMOVAL TOOL
CONNECTOR
|
AD[Analog Devices]
Analog Devices, Inc.
|
| PRF80 |
LUEFTER SCHRIMGITTER EMV 80MM
|
|
| AKSPLT-G-BLK-50-R |
Mini Jumper - w/Removal Grip, 2.54MM pitch
|
Assmann Electronics Inc.
|
| 73S1215F-68IMR/F 73S1215F-68IM/F 73S1215F-44IMR/F |
80515 System-on-Chip with USB, ISO 7816 / EMV, PINpad and More
|
Teridian Semiconductor Corporation
|
| 73S1209F-68IM_F 73S1209F-68IMR_F |
Self-Contained PINpad, Smart Card Reader IC UART to ISO7816 / EMV Bridge IC
|
Teridian Semiconductor Corporation
|
| 19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL
.187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL
.187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL
.187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL
190030058 2 mm2, PUSH-ON TERMINAL
.205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL
190030060 2 mm2, PUSH-ON TERMINAL
.187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL
.250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
|
Molex, Inc.
TE Connectivity, Ltd.
MOLEX INC
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
