PART |
Description |
Maker |
IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics
|
2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 4A条(丁)|47 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247 MOSFET transistors TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset From old datasheet system TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp. Mallory Sonalert Products, Inc. Fuji Semiconductors, Inc.
|
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG SIEMENS AG SIEMENS A G
|
FQPF95N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 57A I(D) | TO-220F 30V LOGIC N-Channel MOSFET 57 A, 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
2SK956-01 2SK1507-01MR |
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247 TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220 From old datasheet system
|
Fuji Semiconductors, Inc.
|
BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
|
BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
FDS6890A FDS6890ANL DS6890ANL |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,7.5A I(D),SO From old datasheet system Dual N-Channel 2.5V Specified PowerTrench TM MOSFET Dual N-Channel 2.5V Specified PowerTrench MOSFET
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Fairchild Semiconductor Corp
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