| PART |
Description |
Maker |
| VE2045C-E3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| VFT760-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V20WL45-M3 20WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT2045CBP |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PM12-M3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 6L45-DO 6L45-DO-201AD |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VBT3045CBP-E3-8W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT10200C-E3 VFT10200C-E3 VBT10200C-E3 VIT10200C-E3 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VT10200C-M3-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT1080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
