| PART |
Description |
Maker |
| TA8062S E003659 |
From old datasheet system
DUAL HIGHSIDE DRIVER
|
TOSHIBA[Toshiba Semiconductor]
|
| MC33091 MC33091A MC33091AP |
HIGH-SIDE TMOS DRIVER 高边TMOS驱动
Regulating Pulse-Width Modulator 16-SOIC -25 to 85 BUF OR INV BASED MOSFET DRIVER, PDIP8
|
Motorola Mobility Holdings, Inc.
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MCZ33285 |
Dual High-Side TMOS Driver
|
Freescale Semiconductor
|
| 33285 |
Dual High-Side TMOS Driver 双高边的TMOS驱动
|
飞思卡尔半导体(中国)有限公司
|
| BTS441T BTS441TG BTS441TS Q67060-S6112-A4 Q67060-S |
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220
Smart Highside Power Switch One Channel: 20mз
Smart Highside Power Switch One Channel: 20m?/a>
|
INFINEON[Infineon Technologies AG]
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
