| PART |
Description |
Maker |
| BTS441R BTS441 BTS441RG BTS441RS Q67060-S6119 Q670 |
Smart Highside Power Switch One Channel: 20mз Status Feedback
IC,PERIPHERAL DRIVER,1 DRIVER,CMOS/MOS,SIP,5PIN,PLASTIC
From old datasheet system
Smart Highside Power Switch One Channel: 20m Status Feedback
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220 or TO 263
Smart Highside Power Switch One Channel: 20m?/a> Status Feedback
|
INFINEON[Infineon Technologies AG]
|
| TA8062AS E003658 |
From old datasheet system
DUAL HIGHSIDE DRIVER
|
TOSHIBA[Toshiba Semiconductor]
|
| MC33091A |
HIGH-SIDE TMOS DRIVER
|
Motorola, Inc
|
| L99DZ70XPTR L99DZ70XP |
Door actuator driver with 6 bridges for double door lock control, mirror fold and mirror axis control, highside driver for mirro
|
ST Microelectronics
STMicroelectronics
|
| MC33285DR2 MC33285D 33285 33285_07 MCZ33285EF MCZ3 |
Dual High-Side TMOS Driver
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 15 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BTS412B2 BTS412B2E3043 BTS412B2E3062A Q67060-S6109 |
Smart Highside Power Switch 智能阻抗高侧电源开
Transient Voltage Suppressor Diodes
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
From old datasheet system
PROFET Smart High Side Power Switch
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
