Part Number Hot Search : 
93LC4 16211 FST16 5KP75A SMAJ150A 6068R1F 100341QC 01PX0
Product Description
Full Text Search

MTH6N60 - Power Field Effect Transistor

MTH6N60_9025701.PDF Datasheet

 
Part No. MTH6N60 MTH6N55
Description Power Field Effect Transistor

File Size 87.48K  /  2 Page  

Maker

New Jersey Semi-Conduct...



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MTH10N50
Maker: MOTOROLA(摩托罗拉)
Pack: TO-3P
Stock: 2014
Unit price for :
    50: $1.16
  100: $1.10
1000: $1.05

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ MTH6N60 MTH6N55 Datasheet PDF Downlaod from Datasheet.HK ]
[MTH6N60 MTH6N55 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MTH6N60 ]

[ Price & Availability of MTH6N60 by FindChips.com ]

 Full text search : Power Field Effect Transistor


 Related Part Number
PART Description Maker
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MTP5N20 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MTP10N25 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MRF1511N RF Power Field Effect Transistor
Freescale Semiconductor...
MRF1517T1 RF Power Field Effect Transistor
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
MRF1517NT1 RF Power Field Effect Transistor
FREESCALE[Freescale Semiconductor, Inc]
MAPLST1617-030CF RF Power Field Effect Transistor
Tyco Electronics
MTP2N90 MTM2N85 MTM2N90 MTP2N85 Power Field Effect Transistor
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
 
 Related keyword From Full Text Search System
MTH6N60 什么封装 MTH6N60 speech voice MTH6N60 specs MTH6N60 Product MTH6N60 Logic
MTH6N60 Channel MTH6N60 Corporate MTH6N60 Temperature MTH6N60 BLDC motor driver MTH6N60 alldatasheet
 

 

Price & Availability of MTH6N60

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.5574498176575