| PART |
Description |
Maker |
| BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
| SGL0163ZSR SGL0163ZSQ |
100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| SGL-0622Z |
100 - 4000 MHz Low Noise Amplifier Silicon Germanium
|
SIRENZA MICRODEVICES
|
| SGL0263Z SGL0263ZSQ SGL0263ZSR |
1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
| BGA62208 |
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
|
Infineon Technologies AG
|
| S1M8662AX01-F0T0 S1M8662A DSS1M8662A |
RX IF/BBA WITH GPS
RX IF / BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4
|
Infineon
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| DSS1M8662A S1M8662AX01-F0T0 |
RX IF/BBA WITH GPS
CDMA/PCS/GPS Triple Mode IF/ baseband IC 码分多址/全球定位系统三模式中基带IC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| SGC-23861 SGC-2386Z |
50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
50-4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
|
SIRENZA MICRODEVICES INC
|
