| PART |
Description |
Maker |
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MMBT7002K-17 |
N-Channel Enhancement Mode FET
|
Diotec Semiconductor
|
| ZVN2106G ZVN2106GTA |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes
|
| STT3981 |
P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
|
| SMG2306N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| STT3434N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS
|
| SMG2314NE |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SSE90N06-15P |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
