| PART |
Description |
Maker |
| AD4C101 |
High Blocking Voltage (600V)
|
Solid State Optronic
|
| BT151-1000RT |
SCR BT151-1000RT<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
12 A thyristor high blocking voltage high operating temperature
|
NXP Semiconductors N.V.
|
| U74LVC2G86L-S08-T U74LVC2G86L-S08-R U74LVC2G86G-S0 |
This device has power-down protective circuit, preventing device destruction when it is powered down.
Glass passivated triacs in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.
|
Unisonic Technologies
|
| 1206GA150JAT1A 1808AA105JA11A 1808GC223JA11A 1808H |
CAP 15PF 2000V 5% NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 2000 V, C0G, 0.000015 uF, SURFACE MOUNT, 1206
High Voltage MLC Chips For 600V to 5000V Application
High Voltage MLC Chips For 600V to 5000V Application
|
AVX, Corp.
AVX Corporation
|
| APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| BZD142-91 BZD142 BZD142-100 BZD142-110 BZD142-120 |
ZenBlockTM; zener with integrated blocking diode 120 V, 2.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ZenBlockTM; zener with integrated blocking diode 82 V, 2.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ZenBlockTM; zener with integrated blocking diode 100 V, 2.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ZenBlockTM; zener with integrated blocking diode 91 V, 2.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
SunLED Co., Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| D3041N |
High DC blocking stability
|
Infineon Technologies A...
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| ADP195 ADP195ACBZ-R7 |
Logic Controlled, High-Side Power Switch with Reverse Current Blocking
|
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Analog Devices
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