PART |
Description |
Maker |
STL20NM20N06 STL20NM20N |
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET N-CHANNEL 200V - 0.088ヘ - 20A PowerFLAT⑩ ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
|
STMicroelectronics
|
STL50NH3LL07 STL50NH3LL |
N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT (6x5) ultra low gate charge STripFET Power MOSFET N-channel 30 V - 0.011 ヘ - 13 A - PowerFLAT⑩ (6x5) ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
STP23N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STFI6N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
STF9N80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
STW21N150K5 |
Ultra low gate charge
|
STMicroelectronics
|
STW15N95K5 STF15N95K5 |
Ultra low gate charge
|
STMicroelectronics
|
SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPP16N50C3-09 SPI16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies A...
|