| PART |
Description |
Maker |
| MBR24040 MBR24040R MBR240100 MBR240100R MBR24020 M |
SCHOTTKY DIODES MODULE TYPE 240A
|
TRANSYS Electronics Limited
|
| NTE471 |
Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| RD00HHS110 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| MRF448 |
The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
|
M/A-COM Technology Solutions, Inc.
|
| RD16HHF1 RD16HHF111 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
|
Mitsubishi Electric Semiconductor
|
| MRF429 |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
|
M/A-COM Technology Solu...
|
| 2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
| 2SC2879 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
| MB1236 MB1206 MB1210 MB1216 MB1220 |
Band wide:150kHz ~ 30MHz / 2 stage filter
Connector Housing; Number of Contacts:3; Pitch Spacing:4.8mm; Number of Rows:1; Series:5025; Connector Body Material:Nylon; Contact Termination:Crimp
Band wide:150kHz ~ 30MHz, 2 stage filter
|
LAMBDA[DENSEI-LAMBDA]
|
| 2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| HERF1601G HERF1602G HERF1608G HERF1603G HERF1604G |
Rectifier: High Efficient
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers
|
TSC[Taiwan Semiconductor Company, Ltd]
|
