| PART |
Description |
Maker |
| 115-456 |
50 Ohms Nominal
|
JFW Industries, Inc.
|
| 115-005-18 |
50 Ohms nominal
|
JFW Industries, Inc.
|
| C-L17DM53742-5001 |
impedance-50 ohms nominal
|
Amphenol Corporation
|
| KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica
|
SANYO
|
| KR-1200AUL |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica
|
SANYO
|
| KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica
|
SANYO
|
| AZ821 AZ831-2C-9DSE AZ821-2C-12DE AZ821-2C-24DE AZ |
Nominal coil VCD: 6: subminiature DIP relay
Nominal coil VCD: 12: subminiature DIP relay
SUBMINIATURE DIP RELAY 微型双酯继电
(AZ831 / AZ821) SUBMINIATURE DIP RELAY
From old datasheet system
Nominal coil VCD: 48: subminiature DIP relay
Nominal coil VCD: 24: subminiature DIP relay
Nominal coil VCD: 9: subminiature DIP relay
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
ZETTLER electronics
|
| D1B0510 D1B051D D1A0510 D1A051D D2A0510 D1B1210 D1 |
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 5.
Reed relay. Contact form 1A SPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B SPST-NC. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B SPDT-CO. Nominal voltage (VDC) 5.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 12.
Reed relay. Contact form 1B DPST-NO. Nominal voltage (VDC) 24.
|
Global Components & Controls
|
| ENE201D-05A EN201D-20A EN201D-14A EN201D-05A EN201 |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V 的Z -陷阱迅杰（标称压敏电0070V
OSCILLATORS 100PPM -20 70 3.3V 4 14.31818MHZ TS HCMOS 5X7MM 4PAD SMD 的Z -陷阱迅杰（标称压敏电20070V
Z-TRAP ENE(Nominal varistor voltage 200 to 470V Z -陷阱迅杰（标称压敏电0070V
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| C2260A1-0234-12M8 |
Nominal frequency (f0)
|
Vectron International, Inc
|
