| PART |
Description |
Maker |
| SFF2001GD SFF2002GD SFF2003GD |
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PM50B4LA06007 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM75CSE060 PM75CSE06005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM75RSD060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM600HSA12 PM600HSA120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM50RSE120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSD120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
