| PART |
Description |
Maker |
| IKY75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| HYG40P120H1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRG7PH35UD1MPBF IRG7PH35UD1MPBF-15 |
Low Switching Losses
|
International Rectifier
|
| STF25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| BUP602D Q67040-A4229-A2 BUP602-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| STP25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
