| PART |
Description |
Maker |
| IKY75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| ZXGD3006 ZXGD3006E6 |
High current 40V Gate Driver reduces IGBT switching losses
|
Diodes Incorporated
|
| IRGS4064DPBF |
Low Switching Losses Square RBSOA
|
International Rectifier
|
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| IKW30N65NL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
