| PART |
Description |
Maker |
| IGC136T170S8RH2 |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| IKY75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKQ75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| ZXGD3006 ZXGD3006E6 |
High current 40V Gate Driver reduces IGBT switching losses
|
Diodes Incorporated
|
| HYG15P120B1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IKW30N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
