| PART |
Description |
Maker |
| IGC136T170S8RH2 |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| IKY50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IGC168T170S8RH |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| HYG40P120H1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG15P120A1K2 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
