| PART |
Description |
Maker |
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| HYG40P120H1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG15P120A1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| IKD04N60RFA |
Optimized Eon, Eoff and Qrr for low switching losses
|
Infineon Technologies A...
|
| BUP304 Q67078-A4200-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q67040-A4230-A2 BUP603D BUP603-D |
IGBT Duopack (IGBT with Antiparallel ...
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| IKW30N65NL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
| IKW75N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
