| PART |
Description |
Maker |
| IKQ50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IKY40N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| IRGB4060DPBF IRGB4060DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRGB4059DPBF IRGB4059DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| HYG15P120A1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRG7PH35UD1MPBF IRG7PH35UD1MPBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRG7PH35UD1PBF IRG7PH35UD1PBF-15 |
Low Switching Losses
|
International Rectifier
|
| HYG75P120D1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| BUP306D Q67040-A4222-A2 BUP306-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IKW75N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
