| PART |
Description |
Maker |
| IKY50N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| HYG30P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IRF7494TRPBF IRF7495TRPBF |
HEXFETPower MOSFET
Low Gate to Drain Charge to Reduce Switching Losses
|
International Rectifier
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| KGF50N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| STP25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| IKW75N65EL5 |
Best-in-Class tradeoff between conduction and switching losses
|
Infineon Technologies A...
|
