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IKY75N120CH3 - Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode

IKY75N120CH3_9002059.PDF Datasheet


 Full text search : Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
 Product Description search : Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode


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SIEMENS[Siemens Semiconductor Group]
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From old datasheet system
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Q67040S4726 IGW75N60T 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
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From old datasheet system
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