| PART |
Description |
Maker |
| Q67106-H5157 |
Expanded Decoder for Program Delivery Control and Video Program System EPDC / VPS Decoder
|
SIEMENS AG
|
| PIC16C54T-HS/SO PIC16C54T-HS/SS PIC16C54T-HSE/SO P |
A newer device is available. Please consider PIC16F54.
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ...
A newer version of this device is available. Please consider PIC16C55A
A newer version of this device is available. Please consider PIC16C56A
A newer version of this device is available. Please consider PIC16C57C
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchip’s powerful PIC architecture into a 28-pin package. Easily adapted for aut
This powerful(100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchip¡¦s powerful PIC architecture into an 18-pin package. Easily adapted f
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller packs Microchip’s powerful PIC architecture into an 18-pin package. Easily adapted for au
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS ROM-based 8-bit microcontroller packs Microchip’s powerful PIC architecture into an 18-pin package. Easily adapted for au
This powerful (200 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS ROM-based 8-bit microcontroller packs Microchip’s powerful PIC architecture into a 28-pin package. Easily adapted for aut
This powerful(100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit microcontroller ...
|
Microchip
|
| SST30VR041 SST30VR041-150-C-U1 SST30VR041-500-C-WH |
4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo 4兆位光盘1兆位/ 256千位的SRAM ROM / RAM内存组合
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
SST[Silicon Storage Technology, Inc]
|
| PIC16F873T-10E/SO PIC16F873T-20/SO PIC16F873T-20I/ |
A newer device is available. Please consider PIC16F873A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F877A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F874A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F876A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
8-bit CMOS FLASH microcontroller
|
Microchip
|
| N800002 |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
E-SWITCH
|
| DFE201610P-R33M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201208S-1R0M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201610E-1R0M DFE201610E-1R0M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201610P-1R5M DFE201610P-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201210S-1R5M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201610E-1R5M DFE201610E-1R5M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
