| PART |
Description |
Maker |
| BZW04-9V4B BZW04-7V8B BZW04-7V0B |
Discrete Devices -Diode-TVS
|
Taiwan Semiconductor
|
| MBRF20150CT-Y MBRF20200CT-Y MBRF2060CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| DESD6V8DLP-7 DESD6V8DLP-7B |
Discrete - Protection Devices - Zener TVSs
|
Diodes
|
| SFF2002G |
Discrete Devices -Diode-Super Fast Rectifier
|
Taiwan Semiconductor
|
| ESH1D |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| ESH1GM ESH1DM |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| ESH2B |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| 3DD101B 3DD101E |
(3DD101A - 3DD101E) Discrete semiconductor devices power transistor
|
SJ
|
| DESDA5V3L DESDA5V3L-7 |
Discrete - Protection Devices - Zener TVSs
DUAL SURFACE MOUNT TVS ARRAY
|
Diodes Incorporated
|
| IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM
x4 SRAM x4的SRAM
|
STMicroelectronics N.V.
Unisonic Technologies Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
