PART |
Description |
Maker |
IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23 High Current Schottky Diode
|
Fairchild Semiconductor Zetex Semiconductors Zetex Semiconductor PLC
|
IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V) FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp. IRF[International Rectifier]
|
BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
BAT54WX-TP |
DIODE SCHOTTKY 30V SOD-523 0.2 A, 30 V, SILICON, SIGNAL DIODE 200mWatt, 30Volt Schottky Diodes
|
Tianjin Global Magnetic Card Co., Ltd. Micro Commercial Components
|
DSA30C150PB DSA30C150HB |
Schottky Diode Gen 2 High Performance Schottky Diode Low Loss and Soft Recovery
|
IXYS Corporation
|
MBR0540 2497 |
40V 0.5A Schottky Discrete Diode in a SOD-123 package From old datasheet system SCHOTTKY DIODE
|
International Rectifier
|
BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管(肖特基二极管整流极端VF为移动通信电源供应下降 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BAS40-04-GS18 BAS40-04-V-G-18 BAS40-00-V-G-18 |
Diode Small Signal Schottky 40V 0.2A 3-Pin SOT-23 T/R SCHOTTKY DIODE SOT23-E3-G
|
Vishay Semiconductors
|
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|