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JANSM2N2904 - BJT( BiPolar Junction Transistor) PNP Transistor

JANSM2N2904_8971150.PDF Datasheet


Part No.	JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JANSR2N2904AL JANSR2N2905 JANSR2N2905AL
Description	BJT( BiPolar Junction Transistor) PNP Transistor
File Size	506.67K / 7 Page
Maker	Microsemi
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PART	Description	Maker
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A	258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
S13003AD	Bipolar Junction Transistor	Shenzhen Jingdao Electr...
MRF5812 MRF5812G	Bipolar Junction Transistor	Advanced Power Technology
6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1	TRANSISTOR \| BJT POWER MODULE \| 3-PH BRIDGE \| DARLINGTON \| 600V V(BR)CEO \| 15A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR \| BJT POWER MODULE \| HALF BRIDGE \| DARLINGTON \| 1.4KV V(BR)CEO \| 100A I(C) TRANSISTOR \| BJT POWER MODULE \| DARLINGTON \| 1.4KV V(BR)CEO \| 200A I(C) 4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver Bipolar Transistor Modules	Fuji Electric Co., Ltd.
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1	TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 260V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 40V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 280V V(BR)CEO \| 7.5A I(C) 晶体管\|晶体管\| npn型\| 280伏特五（巴西）总裁\| 7.5AI（丙	NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
2SB1184 2SB1243 2SB1243R 2SB1243Q 2SB1184P	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3A I(C) \| TO-252AA 晶体管\|晶体管\|进步党\| 50V五（巴西）总裁\| 3A条一（c）\|52AA 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 3A I(C) \| SIP Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)	HIROSE ELECTRIC Co., Ltd. ROHM
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 10A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 1A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 24V V(BR)CEO \| 1A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 16V V(BR)CEO \| 1.4A I(C) \| TO-66VAR TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 4A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 3A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 8A I(C) \| TO-3 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 15A I(C) \| TO-41 TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 3A I(C) \| TO-41 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-41 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 8A I(C) \| TO-41 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 8A条一（c）\|1	Vicor, Corp. Marktech Optoelectronics
P4KE350	284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications	MDE Semiconductor
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| SOT-89 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SO TRANSISTOR \| BJT \| NPN \| 300V V(BR)CEO \| 500MA I(C) \| SO TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\| npn型\| 150伏五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| PNP \| 100V V(BR)CEO \| 2A I(C) \| SO 晶体管\|晶体管\|进步党\| 100V的五（巴西）总裁\|甲一（c）\| TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-89 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 1A条一（c）\|采用SOT - 89 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1A I(C) \| SO 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1A条一（c）\| TRANSISTOR \| BJT \| NPN \| 30V V(BR)CEO \| 400MA I(C) \| SO 晶体管\|晶体管\|叩\| 30V的五（巴西）总裁\| 400mA的一（c）\| TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-89	Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
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