| PART |
Description |
Maker |
| CP624 |
Chip Form: PROG. UNIJUNCTION TRANSISTOR
Programmable Unijunction Transistor
|
Central Semiconductor Corp
|
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE3505M04-T2 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
California Eastern Labs
|
| 2SA1012 E000462 |
From old datasheet system
TRANSISITOR (HIGH CURRENT SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2N4948 |
PN UNIJUNCTION TRANSISTORS
|
Digitron Semiconductors
|
| MU4893 |
UNIJUNCTION TRANSISTOR
|
Central Semiconductor
|
| MU4891 MU4892 |
SILICON UNIJUNCTION TRANSISTOR
|
Digitron Semiconductors
|
| 2N6027 2N6027G-T92-B 2N6027L-T92-B |
PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
Unisonic Technologies
|
| BRY56A |
Programmable unijunction transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2N6028RLRA 2N6028RLRM 2N6028RLRP |
Programmable Unijunction Transistor
|
ON Semiconductor
|
| 2N5431 |
PN SILICON ANNULAR UNIJUNCTION TRANSITOR
|
Digitron Semiconductors
|
| MTW4N80E MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS是电子场效应功率场效TRANSISITOR N沟道增强模式硅栅
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
