| PART |
Description |
Maker |
| 2N1671B |
UNIJUNCTION TRANSISITOR
|
New Jersey Semiconductor
|
| PA831TF |
NPN Silicon Epitaxial Transisitor(NPN外延晶体
|
NEC Corp.
|
| BC849C BC849B |
GENERAL PURPOSE TRANSISITOR NPN SILICON
|
Zowie Technology Corporation
|
| NDS355NNF40 |
N-Channel Logic Level Enhancement Mode Field Effect Transisitor
|
Fairchild Semiconductor
|
| MU4893 |
UNIJUNCTION TRANSISTOR
|
Central Semiconductor
|
| 2N1671 |
UNIJUNCTION TRANSISTOR
|
ASI[Advanced Semiconductor]
|
| 2N6027 2N6027G-T92-B 2N6027L-T92-B |
PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
Unisonic Technologies
|
| BRY39 |
Programmable unijunction transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| BRY56A |
Programmable unijunction transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2N6028 2N6027 GES6028 GES6027 |
PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
General Electric Solid State
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2N6138-1 |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| MTW4N80E MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS是电子场效应功率场效TRANSISITOR N沟道增强模式硅栅
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
