| PART |
Description |
Maker |
| BFS481 Q62702-F1572 |
From old datasheet system
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BGA428 |
BGA428 High Gain/ Low Noise Amplifier
BGA428 High Gain Low Noise Amplifier
Silicon MMICs - 19dB LNA, 1.4...2.5GHz, NF=1.4dB, 50Ohm, SOT363
|
INFINEON[Infineon Technologies AG]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| AM-119PIN AM-AMC-119 |
High Performance Amplifier, 8 dB Gain, 30 - 250 MHz 高性能放大器，8 dB增益0 - 250兆赫
High Performance Amplifier/ 8 dB Gain/ 30 - 250 MHz
|
Tyco Electronics
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| BC635 Q68000-A3361 BC637 BC639 Q68000-A2285 Q68000 |
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Silicon AF Transistors (High current gain High collector current) NPN硅晶体管自动对焦（高电流增益高集电极电流
From old datasheet system
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
| L2SC3837T1G L2SC3837T3G |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
Leshan Radio Company
|
| AH212 |
1 Watt High Linearity / High Gain InGaP HBT Amplifier
|
ETC
|
| L2SC3838LT3G |
High-Frequency Amplifier Transistor Small rbb Cc and high gain.
|
Leshan Radio Company
|
| NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
