| PART |
Description |
Maker |
| HT23C010 23C010 |
From old datasheet system
CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘
CMOS 128K 8-Bit Mask ROM
CMOS 128K? 8-Bit Mask ROM
CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc.
HOLTEK[Holtek Semiconductor Inc]
|
| AT27C2048 AT27C2048-12 AT27C2048-12JC AT27C2048-12 |
2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PDIP40
12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDIP40
12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDSO40
2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PQCC44
Enhanced Product 12-Bit Asynchronous Binary Counter 16-TSSOP -55 to 125
12-Bit Asynchronous Binary Counter 16-VQFN -40 to 85
12-Bit Asynchronous Binary Counter 16-SSOP -40 to 85
12-Bit Asynchronous Binary Counter 16-TVSOP -40 to 85
12-Bit Asynchronous Binary Counter 16-PDIP -40 to 85
12-Bit Asynchronous Binary Counter 16-SOIC -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| CY27C128-120WMB CY27C128-150JC CY27C128-150WC CY27 |
128K (16K x 8-Bit) CMOS EPROM
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 120 ns, PQCC32
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 45 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 OTPROM, 150 ns, PDIP28
128K (16K x 8-Bit) CMOS EPROM 16K X 8 UVPROM, 200 ns, CDIP28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| TC55V4376FF-83 |
128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
| TC55V4336FF-100 |
128K Word x 32 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?32浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM
2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350 |
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
