| PART |
Description |
Maker |
| W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| ELS-316GWB |
Technical Data Sheet 0.36 Single Data Displays 技术数据表0.36单数据显
|
Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
|
| M14D2561616A-2E |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| HI-878306 |
ARINC INTERFACE DEVICE 8 bit parallel data converted to 429 & 561 serial data out
|
Holt Integrated Circuits
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| AT-45DB081B 45DB081B |
AT-45DB081B DATA FLASH RELIABILITY DATA
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
