| PART |
Description |
Maker |
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
| KRF7805Z |
Continuous Drain Current, VGS 10V, Ta = 25 A Pulsed Drain Current IDM 120 A
|
TY Semiconductor Co., Ltd
|
| SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| 74LVC1G07GS 74LVC1G07GM |
Buffer with open-drain output LVC/LCX/Z SERIES, 1-INPUT NON-INVERT GATE, PDSO6
Buffer with open-drain output 漏极开路输出的缓冲
|
NXP Semiconductors N.V.
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| NC7WZ07P6X NC7WZ07 NC7WZ07L6X |
TinyLogic UHS Dual Buffer (Open Drain Outputs) LVC/LCX/Z SERIES, DUAL 1-INPUT NON-INVERT GATE, PDSO6
TinyLogic UHS Dual Buffer (Open Drain Outputs)
TinyLogic UHS Dual Buffer (Open Drain Outputs)
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| T06 H06 74HC3G06 74HC3G06DC 74HC3G06DP 74HCT3G06 7 |
Inverter with open-drain outputs 漏极开路输出的反相
74HC3G06; 74HCT3G06; Inverter with open-drain outputs
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MC74ACT05DR2 MC74ACT05DR2G MC74AC05N MC74ACT05D 74 |
Hex Inverter with Open−Drain Outputs AC SERIES, HEX 1-INPUT INVERT GATE, PDSO14
Hex Inverter with Open−Drain Outputs
|
ONSEMI[ON Semiconductor]
|
| AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| MIC631505 MIC6315 MIC6315-46D2U MIC6315-46D3U MIC6 |
Open-Drain レP Reset Circuit
Open-Drain μP Reset Circuit
Open-Drain 渭P Reset Circuit
Open-Drain 楼矛P Reset Circuit
|
Micrel Semiconductor
|
| 74AHCT1G06GV 74AHC1G06GV |
Inverter with open-drain output
Inverter with open drain output 漏极开路输出的反相
|
NXP Semiconductors N.V.
|
