PART |
Description |
Maker |
MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
APT30SCD65B |
SiC Schottky Diodes
|
Microsemi
|
SCS106AG |
SiC Schottky Barrier Diodes
|
Rohm
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
BAT54 BAT54C BAT54S BAT54A BAT54_SERIES_4 BAT54SER |
DIODE KLEINSIGNAL SMD SCHOTTKY 贴片肖特基二极管KLEINSIGNAL 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer Schottky barrier (double) diodes From old datasheet system DISCRETE SEMICONDUCTORS SCHOTTKY BARRIER DOUBLE DIODES
|
Won-Top Electronics Co., Ltd. PHILIPS[Philips Semiconductors] NXP Semiconductors
|
SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|