| PART |
Description |
Maker |
| 45911-0050 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Signal, Signal, Signal, Power Sequence)
|
Molex Electronics Ltd.
|
| 45912-0009 0459120009 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 3 Segments (Power, Signal, Signal Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| 0459110017 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 3 Segments (Signal, Signal, Power Sequence), Through Hole Solder for 1.57mm (.062) Thick PC Board
|
Molex Electronics Ltd.
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 45912-0033 0459120033 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Signal, Power, Signal, Power Sequence),Press-Fit
|
Molex Electronics Ltd.
|
| BSV12 BSW65 BSS44 BSW67 BSX64 BSV16 BFY50 BSX60 BS |
Small Signal Transistors 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Small Signal Transistors 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Leaded Small Signal Transistor General Purpose
|
http://
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Siemens Semiconductor Group
Seme LAB
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| S5L9290X01-L0R0 S5L9290X |
DIGITAL SIGNAL PROCESSOR FOR CDP Data Sheet
signal processing LSI for the CD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CD0805-B0130 |
Schottky Barrier Diodes IO=100mA, VR=30V SMALL SIGNAL 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Bourns, Inc.
|
|
