| PART |
Description |
Maker |
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML59P4512 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-375375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
