| PART |
Description |
Maker |
| IRKT26 IRKT12AS90 IRK2.6 IRKT27AS90 IRKT04AS90 IRK |
400V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package 400V 27A条倍增器电路积极相位控制晶闸管/二极管的地址，阿- Pak封装
1600V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package 1600V 27A条倍增器电路积极相位控制晶闸管/二极管的地址，阿- Pak封装
THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR 晶闸二极管和晶闸晶闸
From old datasheet system
ADD-A-pak-TM GEN V Power Modules
ADD-A-pakTM GEN V Power Modules
1400V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1400V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1400V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
800V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
800V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
800V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
800V 25A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
600V 25A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1600V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1600V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1000V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1000V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1000V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1000V 25A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
400V 25A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1200V 27A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
1200V 27A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1200V 25A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
|
Atmel, Corp.
JAE Electronics, Inc.
International Rectifier, Corp.
IRF[International Rectifier]
|
| HGTP12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
Fairchild Semiconductor
|
| FDB390N15A |
N-Channel PowerTrench? MOSFET 150V, 27A, 39m
|
Fairchild Semiconductor
|
| HGTG12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF3315 |
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
|
International Rectifier
|
| 07CM-27S12L |
Bus Converter 48V Input / 12V Output / 27A
|
BEL[Bel Fuse Inc.]
|
| IRGBC40 IRGBC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
International Rectifier
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5018BLL APT5018SLL |
POWER MOS 7 500V 27A 0.180 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| 1140-4R7M-RC 1140-101K-RC 1140-3R3M-RC 1140-681K-R |
RF Choke; Series:1140; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:100uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.025ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:3.3uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.139ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:7.2A; DC Resistance Max:0.114ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
Very high current capacity Low DCR
RF Choke; Series:1140; Inductance:82uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:14.4A; DC Resistance Max:0.023ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1140; Inductance:2.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:27A; DC Resistance Max:0.002ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
|
BOURNS INC
Bourns Electronic Solutions
|
| APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
