| PART |
Description |
Maker |
| DTC144T DTC144TL-AN3-R DTC144T-AE3-R DTC144T-AL3-R |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| DTC144E-AL3-R DTC144E DTC144EL-T9S-R DTC144E-AE3-R |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| BCR133S Q62702-C2376 BCR133SQ62702C2376 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN硅数字晶体管阵列（开关电路，逆变器，接口电路，驱动电路）
TRANSISTOR DIGITAL SOT363
NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCR42PN BCR42 |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR119S |
NPN Silicon Digital Transistor Array NPN硅数字晶体管阵列
Digital Transistors - R1= 4,7 kOhm SOT363
|
INFINEON[Infineon Technologies AG]
http://
|
| BCR35PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| EMH9FHA EMH9FHAT2R |
NPN NPN Digital transistor (Corresponds to AEC-Q101)
|
ROHM
|
| EMH3T2R |
NPN NPN Digital transistor(with built-in resistors)
|
ROHM
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
