| PART |
Description |
Maker |
| 0873811464 87381-1464 |
2.00mm (.079) Pitch Milli-Grid Receptacle, Surface Mount, Top Entry, 0.38μm (15μ)Gold (Au) Plating, with Cap, without Locating Pegs, 14 Circuits, Lead-free
2.00mm (.079") Pitch Milli-Grid垄芒 Receptacle, Surface Mount, Top Entry, 0.38楼矛m (15楼矛")Gold (Au) Plating, with Cap, without Locating Pegs, 14 Circuits, Lead-fre
|
Molex Electronics Ltd.
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24
High- Performance EE PLD FLASH PLD, 25 ns, PDIP24
Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PQCC28
High- Performance EE PLD FLASH PLD, 10 ns, CQCC28
High- Performance EE PLD FLASH PLD, 15 ns, CDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDSO24
3.3V, 1 Output, LVTTL to LVPECL Clock Converter
CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN
High-performance EE PLD
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| 2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
| AD801702 AD8017ARZ-REEL |
Low Cost, High Output Current, High Output Voltage Line Driver
Dual High Output Current, High Speed Amplifier
|
Analog Devices
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SC2614 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| BUX4012 |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
|
