| PART |
Description |
Maker |
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| MA515.C.CG.001 MA515CCG001 |
UV and vandal resistant PE housing
Heavy Duty Screw Mount Antenna MIMO Single Band 2.4GHz
|
Taoglas antenna solutio...
|
| TQP777002 |
2.4 GHz ISM Band InGaP HBT Matched Power Amplifier
2.4GHz ISM Band InGaP HBT Matched Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| RF2958PCBA RF2958TR13 |
2.4GHz SPREAD-SPECTRUM TRANSCEIVER 2.4扩谱收发
2.4GHz SPREAD-SPECTRUM TRANSCEIVER TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC32
|
RF Micro Devices, Inc.
|
| TIM6472-25UL TIM5964-12UL09 |
HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz
HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| CHV2243 CHV2243-99F_00 CHV2243-99F/00 |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| CHV2243A |
Fully Integrated Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
| SKY77607 |
Multiband Multimode Power Amplifier Module for Quad-Band GSM / EDGE and Dual-Band (Band I and VIII) WCDMA / HSDPA / HSUPA / HSPA Handsets
|
Skyworks Solutions Inc.
|
