| PART |
Description |
Maker |
| SIGC05T60SNC |
IGBTs - HV Chips - SIGC05T60SNC, 600V, 4A
|
Infineon
|
| SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
| SIGC223T120R2CS |
IGBTs - HV Chips - SIGC223T120R2CS, 1200V, 150A
|
Infineon
|
| SIGC109T120R3L |
IGBTs - HV Chips - SIGC109T120R3L, 1200V, 100A
|
Infineon
|
| SIGC156T120R2C BSM100GD120DN2 ECONOPACK3 Q67041-A4 |
IGBTs - HV Chips - SIGC156T120R2C, 1200V, 100A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| HGTD6N40E1 HGTD6N50E1S HGTD6N40E1S HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs
6A 400V and 500V N-Channel IGBTs
6A, 400V and 500V N-Channel IGBTs 7.5 A, 500 V, N-CHANNEL IGBT, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BM-10EG88ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| APT30GT60BR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 58A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
