| PART |
Description |
Maker |
| W3EG2256M72ASSR265JD3XG |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL 4GB 2x256Mx72 ECC的DDR SDRAM的注册，瓦特/锁相
|
Bourns, Inc.
|
| TS4GJF300 |
4GB USB2.0 JetFlash垄莽300
4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| TS4GJF2A |
4GB USB2.0 JetFlash垄莽2A
4GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
| LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位（512 KB的16）SmartVoltage闪存
8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位（512 KB的16）SmartVoltage闪存
|
Sharp Corporation
Sharp, Corp.
|
| S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| HM1-6642B_883 HM1-6642_883 HM6-6642_883 HM6-6642B_ |
512 x 8 CMOS PROM 512 X 8 OTPROM, 140 ns, CDIP24
512 x 8 CMOS PROM 512 X 8 OTPROM, 220 ns, CDIP24
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| LH5496HU-80 LH5496U-80 LH5496HD-20 LH5496-20 LH549 |
CMOS 512 X 9 FIFO 512 × 9的CMOS先进先出
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| AM27S31ADC AM27S31JC AM27S31ALC |
512 X 8 OTPROM, 35 ns, CDIP24
512 X 8 OTPROM, 55 ns, PQCC28
512 X 8 OTPROM, 35 ns, CQCC32
|
ADVANCED MICRO DEVICES INC
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| TS4GJF130 |
4GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| HYS72T128000HR-3.7-A HYS72T128000HR-5-A HYS72T1280 |
256MB - 4GB, 240pin
|
Infineon
|
| HYS72T32000HR-3.7-A HYS72T32000HR-5-A HYS72T64001H |
256MB - 4GB, 240pin
|
Infineon
|
