| PART |
Description |
Maker |
| K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM 128K × 36
128Kx36 & 256Kx18 Pipelined NtRAMTM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7N403601A |
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
|
Samsung semiconductor
|
| K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N403601M K7N401801M |
128Kx36 & 256Kx18 Pipelined NtRAM-TM
|
SAMSUNG[Samsung semiconductor]
|
| K7N401801B-QC13 K7N403601B-QC13 K7N403601B-QI13 K7 |
128Kx36 & 256Kx18 Pipelined NtRAM
|
http://
Samsung semiconductor
|
| KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
| K7N403601B |
(K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| K7N403609A |
128Kx36-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| MB91F465KBPMT-GSE2 MB91F465KA MB91F465KAPMT-GSE2 |
32-bit RISC, load/store architecture, five-stage pipeline
|
Cypress Semiconductor
|
| BT136B BT136B-500 BT136B-500F BT136B-500G BT136B-6 |
Transient Voltage Suppressor Diodes 双向可控
Triacs 800 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263
8-Bit Multi-Level Pipeline Register 24-SOIC -40 to 85 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-263
8-Bit Multi-Level Pipeline Register 24-SOIC -40 to 85 双向可控
Triacs sensitive gate
Triacs logic level
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
