| PART |
Description |
Maker |
| RFP-10-100RV |
Flanged Resistors 10 Watts, 100Ω
Flanged Resistors 10 Watts, 100ヘ
|
Anaren Microwave
|
| RFP-400-100R RFP-800-100R |
Flanged Resistors 400 Watts, 100ohm
Flanged Resistors 400 Watts, 100 ohm
|
Anaren Microwave
|
| PTB20031 |
40 Watts, 42070 MHz RF Power Transistor
40 Watts, 420-470 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| UTV120 UTV200 |
12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
| PTB20105 |
20 Watts, 92560 MHz Cellular Radio RF Power Transistor
20 Watts, 925-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
| I100N50X4 |
Flange Mount Termination 100 Watts, 50楼?
Flange Mount Termination 100 Watts, 50Ω
|
Anaren Microwave
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
| PTF102028 |
18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
