| PART |
Description |
Maker |
| CDBB5200-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=200V, V-R=200V, I-O=5A
|
Comchip Technology
|
| FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A
200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 6.8AI（四）|20F
200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
