| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| HY5PS121621BFP |
VDD ,VDDQ =1.8 +/- 0.1V
|
Hynix Semiconductor
|
| LT1721IGNTRPBF LT1721CSTRPBF LT1721CGNTRPBF LT1720 |
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD COMPARATOR, 4500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO16
Dual, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs; Package: SO; No of Pins: 8; Temperature Range: -40°C to 85°C
UltraFast:4.5ns at 20mV Overdrive 7ns at 5mV Overdrive
Dual/Quad, 4.5ns, Single Supply 3V/5V Comparators with Rail-to-Rail Outputs
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| EM47EM1688SBA-150 EM47EM1688SBA-125 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| M3764 |
VDD CONTROL ALARM SOUND
|
List of Unclassifed Manufacturers
ETC
SHENZHEN TIRO SEMICONDUCTOR
|
| MT8812 |
8 x 12 Analog Switch Array with low on-resistance, for VDD = 4.5V to 14.5V
|
Zarlink Semiconductor
|
| MT8806 |
8 x 4 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
| 2SK3305 |
Low gate charge QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)
|
TY Semiconductor Co., L...
|
| XCM410AA01MR-G XCM4101 |
2 Channel Voltage Detector (Sense Pin separated from VDD)
|
Torex Semiconductor
|
| GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
| C8051F552-IM C8051F570-IM C8051F560-IQ C8051F561-I |
8-BIT, FLASH, 50 MHz, MICROCONTROLLER, QCC24
Up to 200 ksps Up to 32extemal single-ended inputs VREF from on-chip VREF, extemal pin or VDD
Up to 200 ksps Up to 32extemal single-ended inputs VREF from on-chip VREF, extemal pin or VDD
|
SILICON LABORATORIES
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